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Item #:
45255463
BOJACK IRLB3034 New MOS FET Transistor N-Channel Enhanced Conductive Element(Pack of 5)
Item #:
45255463
KYD 10
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Order now and get it around Thursday, June 25
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Widely used in electric vehicles, LED lighting, smart home security monitoring, communication transmission, electrical power supply, toys and network computers, etc.
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What Stands Out
High Performance
The BOJACK IRLB3034 features enhanced conductivity, ensuring superior efficiency and reliability for various electronic applications, outperforming standard transistors in power management.
Cost-Effective Pack
Sold in a pack of 5, this product offers excellent value, providing multiple transistors for your projects at a competitive price, ideal for both hobbyists and professionals alike.
Versatile Applications
Designed for N-channel applications, these transistors are suitable for a wide range of uses, including switching and amplification, catering to diverse electronic development needs.
Product Details
- Pack of 5pcs BOJACK IRLB3034 New MOS FET Transistors
- TO-220AB packaging for safe and convenient transportation
- 375W power consumption at 25°C
- Enhanced body diode dV/dt and dI/dt Capability
- Suitable for electric vehicles, LED lighting, smart home devices, security monitoring, communication, power supply, toys, and network computers
- Electrical parameters: Continuous drain current Id: 195A, Drain-source voltage Vds: 40V, Drain-source on-resistance: 1.7Ω, Rds (on) test voltage Vgs: 10V
| Item Weight | 0.1 lbs (50 grams) |
Who Should Buy?
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Electronics Hobbyists
Ideal for DIY electronics projects requiring efficient switching for various applications, enhancing overall performance.
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Power Management
Suitable for power supply designs needing effective control of power distribution and energy efficiency in circuits.
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Automotive Applications
Great for modifications in automotive electrical systems where reliable switching and thermal performance are crucial.
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Beginners
Not ideal for novice users unfamiliar with FETs, as proper selection and use may be difficult.
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Low-Current Circuits
May not be suitable for applications requiring minimal current draw, as it excels in higher power scenarios.
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High-Voltage Systems
Inappropriate for high-voltage circuits that demand specific rating criteria beyond this transistor's capabilities.
Product Description
BOJACK IRLB3034 New MOS FET Transistor N-Channel Enhanced Conductive Element(Pack of 5)
About This Item
Introducing the BOJACK IRLB3034 New MOS FET Transistor - the perfect solution for all your electronic needs. This pack of 5pcs is designed to enhance conductivity, ensuring optimal performance and efficiency in your circuits. With its impressive electrical parameters, this N-Channel transistor offers a continuous drain current of 195A, allowing for high-power applications. The drain-source voltage of 40V ensures reliable operation, while the low drain-source on-resistance of 1.7Ω minimizes power loss and heat dissipation. Thanks to the advanced design of the BOJACK IRLB3034, you can expect unparalleled performance.
The Rds (on) test voltage of 10V guarantees a low voltage drop across the transistor, resulting in improved efficiency. With a power consumption of 375W, this transistor can handle even the most demanding tasks. Not only does this transistor excel in performance, but it also offers impressive durability. With a maximum working temperature of 175°C and a minimum working temperature of -55°C, it can withstand harsh operating conditions without compromising its functionality. Each pack includes 5 high-quality IRLB3034 BOJACK transistors, ensuring you have an ample supply for your projects.
Whether you are a hobbyist or a professional, these transistors are sure to meet your needs. Upgrade your electronic circuits with the BOJACK IRLB3034 New MOS FET Transistor. Experience enhanced conductivity, superior performance, and maximum efficiency. Shop now and take your projects to the next level.
Have any Query? Chat with us
Customer Questions & Answers
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Question:
What is the BOJACK IRLB3034 MOS FET Transistor used for?
Answer: The BOJACK IRLB3034 MOS FET Transistor is primarily used in power applications, such as motor drivers, power management, and lighting control. It is designed for high-speed switching, making it ideal for electronic circuits where efficiency and response time are crucial. This transistor is often employed in robotics, automotive systems, and consumer electronics, providing reliable performance in various applications. -
Question:
What are the key specifications of the BOJACK IRLB3034?
Answer: The BOJACK IRLB3034 MOS FET features an N-channel design, with a maximum drain-source voltage of 30V and a continuous drain current rating of up to 62A. This significantly enhances its conductivity compared to traditional FETs, enabling efficient performance in demanding applications. Its low RDS(on) (drain-source on resistance) ensures minimal power loss during operation, which is vital for battery-operated devices. -
Question:
How do I connect the BOJACK IRLB3034 in my circuit?
Answer: To connect the BOJACK IRLB3034 in your circuit, start by identifying the gate, drain, and source terminals. The gate should be connected to a voltage source that turns the MOS FET on or off; the drain to your load, and the source to the ground in most applications. It’s crucial to ensure proper heat dissipation using a heatsink to maintain optimal performance under load, especially in high-power applications. -
Question:
What makes the BOJACK IRLB3034 suitable for high frequency applications?
Answer: The BOJACK IRLB3034 is particularly suited for high-frequency applications due to its fast switching capabilities. The enhanced conductive element allows it to switch on and off quickly, which minimizes time loss and increases efficiency in pulse-width modulation (PWM) applications. This feature is essential in controlled drive systems, LED lighting applications, and RF amplifiers. -
Question:
What is the difference between N-channel and P-channel MOS FETs?
Answer: N-channel MOS FETs, like the BOJACK IRLB3034, use electrons as charge carriers, which provides better conductivity and efficiency compared to P-channel devices. N-channel transistors are more commonly used in applications requiring higher current and lower on-resistance. They are typically easier to drive and integrate into a circuit because they turn on with a positive voltage. P-channel devices, in contrast, use holes as charge carriers and are often utilized where negative voltages are required. -
Question:
Can I use the BOJACK IRLB3034 in parallel with other transistors?
Answer: Yes, you can use the BOJACK IRLB3034 in parallel with other MOS FETs to handle higher current loads or improve reliability. However, it’s essential to ensure that each transistor receives the same gate drive signal and to implement proper current sharing techniques to avoid thermal runaway. This is often used in power management circuits to distribute load evenly and enhance performance across multiple channels. -
Question:
What types of circuits benefit from using the BOJACK IRLB3034?
Answer: The BOJACK IRLB3034 is ideal for various types of circuits, including those in automotive applications like motor control and power inverters. It also serves well in robotics for controlling actuators and sensors. Additionally, it's effective in power supply designs where efficient switching is critical. These characteristics make it suitable for hobbyists and professionals alike, looking to optimize their power electronics. -
Question:
How does the BOJACK IRLB3034 improve energy efficiency?
Answer: The BOJACK IRLB3034 enhances energy efficiency by minimizing power dissipation through its low on-resistance (RDS(on)). This feature allows for less heat generation compared to older models, resulting in lower energy loss during operation. In renewable energy applications like solar inverters, this leads to more power being utilized effectively, maximizing overall system performance and sustainability. -
Question:
Is there any protection needed when using the BOJACK IRLB3034?
Answer: While the BOJACK IRLB3034 is robust, it's advisable to implement protection features like snubber circuits for inductive loads to prevent voltage spikes and ensure longevity. Additionally, using gate resistors can help control the rate at which the transistor switches on and off, further safeguarding against potential damage. These practices are especially crucial in circuits where high temperatures or suppressive transients are commonplace. -
Question:
Where can I buy BOJACK IRLB3034 New MOS FET Transistor N-Channel Enhanced Conductive Element (Pack of 5)?
Answer: You can buy the BOJACK IRLB3034 New MOS FET Transistor N-Channel Enhanced Conductive Element (Pack of 5) on Ubuy in Cayman Islands. Ubuy provides a wide selection of electronic components and offers convenience for those looking to purchase high-quality transistors like the BOJACK IRLB3034. By shopping on Ubuy, you benefit from a user-friendly interface and access to product specifications and reviews, ensuring you make an informed purchase.
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Pros
- High efficiency
- Low on-resistance
- Excellent thermal performance
- Wide voltage range
- Great for high-speed applications
Cons
- Limited package options
Product Price History
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KYD 10
Order now and get it around Thursday, June 25
This item is not restrict in my country.(Please click on above link if this item is not restrict in your country, So our team will review and allow.)
QTY:
Secured transaction
Ubuy works hard to protect your security and privacy. Our advanced payment security system ensures confidentiality by encrypting your information during transmission using AES (Advanced Encryption Standards) and SSL (Secure Socket Layer) protocols. Your payment details are 100% secure as we do not share your payment details with third party sellers.
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Features & Benefits
- Perfect packaging, safe, convenient and timely transportation.
- Package included: 5* IRLB3034.
- Power consumption Pd at 375W at 25°C.
- Enhanced body diode dV/dt and dI/dt capability.
- Maximum working temperature: 175°C.
- Minimum working temperature: -55°C.